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BGS8H2

SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE; ? Operating frequency from 2300 MHz to 2690 MHz\n? Noise figure (NF) = 1.0 dB\n? Gain 12.5 dB\n? Bypass switch insertion loss of 2.3 dB\n? High input 1 dB compression point of -1.5 dBm\n? High in band IP3i of 4 dBm\n? Supply voltage 1.5 V to 3.1 V\n? Self shielding package concept\n? Integrated supply decoupling capacitor\n? Optimized performance at a supply current of 5.8 mA\n? Power-down mode current consumption < 1 μA\n? Integrated temperature stabilized bias for easy design\n? Require only one input matching inductor\n? Input and output DC decoupled\n? ESD protection on all pins (HBM > 2 kV)\n? Integrated matching for the output\n? Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232\n? 180 GHz transit frequency - SiGe:C technology\n? Moisture sensitivity level of 1\n;

The BGS8H2 is a Low Noise Amplifier (LNA) with bypass switch for LTE receiver applications,available in a small plastic 6-pin extremely thin leadless package. The BGS8H2 requiresone external matching inductor.\nThe BGS8H2 delivers system-optimized gain for both primary and diversity applications wheresensitivity improvement is required. The high linearity of these low noise devicesensures the required receive sensitivity independent of cellular transmit power level inFDD (Frequency Division Duplex) systems. When receive signal strength is sufficient, theBGS8H2 can be switched off to operate in bypass mode at a 1 μA current, to lower powerconsumption.\nThe BGS8H2 is optimized for 2300 MHz to 2690 MHz.\n

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BGS8H2

SiGe:C low-noise amplifier MMIC with bypass switch for LTE

ETC

BGS8H2UK

SiGe:C low-noise amplifier MMIC with bypass switch for LTE; \n\nOperating frequency from 2300 MHz to 2690 MHz\n\nNoise figure (NF) = 0.95 dB\n\nGain 13 dB with single matching coil\n\nBypass switch insertion loss of -2.2 dB\n\nHigh input 1 dB compression point of -1 dBm\n\nHigh in band IP3i of 3.5 dBm\n\nSupply voltage 1.5 V to 3.1 V\n\nIntegrated supply decoupling capacitor\n\nOptimized performance at a supply current of 5.8 mA\n\nBypass mode current consumption < 1 μA\n\nIntegrated temperature stabilized bias for easy design\n\nRequires only one input matching inductor\n\nInput and output AC coupled\n\nESD protection on all pins (HBM > 2 kV)\n\nIntegrated matching for the output\n\nAvailable in a WLCSP 0.69 mm x 0.44 mm x 0.29 mm: SOT1445-1\n\n180 GHz transit frequency - SiGe:C technology\n\n\nMoisture sensitivity level 1\n\n\n\n\n;

\nThe BGS8H2UK is a Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a Wafer Level Chip Scale Package (WLCSP). This product is only used in an overmolded module.\n\nThe BGS8H2UK delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in Frequency Division Duplex (FDD) systems. To lower power consumption the receive signal strength is sufficient. The BGS8H2UK can be switched off to operate in bypass mode at a 1 μA current. The BGS8H2UK requires only one external matching inductor.\n\nThe BGS8H2UK is optimized for 2300 MHz to 2690 MHz.\n\n

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8H2A

2PhaseHybridStepperMotor

BGT24MTR11E6327XUMA1

INFINEON
QFN32