General description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features and benefits

■ Low noise high gain microwave transistor

■ Noise figure (NF) = 0.8 dB at 5.8 GHz

■ High maximum power gain 18.5 dB at 5.8 GHz

■ 110 GHz fT silicon germanium technology

Applications

■ 2nd LNA stage and mixer stage in DBS LNB’s

■ Low noise amplifiers for microwave communications systems

■ Ka band oscillators DRO’s

■ Low current battery equipped applications

■ Microwave driver / buffer applications

■ Wi-Fi / WLAN / WiMAX

■ GPS

■ RKE

■ AMR

■ ZigBee

■ LTE, cellular, UMTS

■ SDARS first stage LNA

■ FM radio

■ Mobile TV

■ Bluetooth