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BFT93

PNP 5 GHz wideband transistor

DESCRIPTION PNPtransistorinaplasticSOT23envelope. ItisprimarilyintendedforuseinRFwidebandamplifiers,suchasinaerialamplifiers,radarsystems,oscilloscopes,spectrumanalyzers,etc.Thetransistorfeatureslowintermodulationdistortionandhighpowergain;duetoitsveryhig

BFT93

絲?。?a target="_blank" title="Marking" href="/x1s/marking.html">X1s；Package：SOT-23；PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA)

PNPSiliconRFTransistor ?Forlowdistortionbroadbandamplifiersupto1GHzatcollectorcurrentsfrom2mAupto20mA

BFT93

PNP 5 GHz寬頻帶晶體管; High power gain\nHigh transition frequency\nLow intermodulation distortion\n;

PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR93 and BFR93A.\n

BFT93

PNP Silicon RF Transistor for broadba...;

BFT93W

PNP 4 GHz寬頻帶晶體管; 金屬化鍍金確保極佳的可靠性\n高功率增益\n小型封裝\n;

硅PNP晶體管，采用SOT323 (S-mini)塑料封裝。BFT93W使用的晶體與采用SOT23封裝的BFT93相同。\n

BFT93W

PNP 4 GHz wideband transistor

DESCRIPTION SiliconPNPtransistorinaplastic,SOT323(S-mini)package.TheBFT93WusesthesamecrystalastheSOT23version,BFT93. FEATURES ?Highpowergain ?Goldmetallizationensuresexcellentreliability ?SOT323(S-mini)package. APPLICATIONS Itisintendedasageneralpurpo

BFT93_CNV_15

PNP 5 GHz wideband transistor

BFT93W_15

PNP 4 GHz wideband transistor