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BFS540

NPN 9 GHz wideband transistor

DESCRIPTION NPNtransistorinaplasticSOT323envelope. ItisintendedforRFwidebandamplifierapplicationssuchassatelliteTVsystemsandRFportablecommunicationequipmentwithsignalfrequenciesupto2GHz. FEATURES ?Highpowergain ?Lownoisefigure ?Hightransitionfrequency

BFS540

Low Noise Figure

DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP.@VCE=8V,lc=10mA,f=900MHz ?HighCurrent-Gain—BandwidthProduct fT=9GHzTYP.@VCE=8V,lc=40mA,f=1GHz APPLICATIONS ?DesignedforRFwidebandamplifierapplicationssuchas satelliteTVsystemsandRFportable

BFS540

Silicon NPN RF Transistor

DESCRIPTION ?LowNoiseFigure NF=1.3dBTYP.@VCE=8V,lc=10mA,f=900MHz ?HighCurrent-Gain—BandwidthProduct fT=9GHzTYP.@VCE=8V,lc=40mA,f=1GHz APPLICATIONS ?DesignedforRFwidebandamplifierapplicationssuchas satelliteTVsystemsandRFportable

BFS540

Silicon NPN RF Transistor;

DESCRIPTION\n? Low Noise Figure\n?? NF = 1.3 dB TYP. @VCE = 8 V, lc = 10 mA, f = 900 MHz\n? High Current-Gain—Bandwidth Product\n?? fT= 9 GHz TYP. @VCE = 8 V, lc = 40 mA, f = 1GHz\n??\nAPPLICATIONS\n? Designed for RF wideband amplifier applications such as\n?? satellite TV systems and RF portable communication\n?? equipment with signal frequencies up to 2 GHz.

BFS540

NPN 9 GHz寬頻帶晶體管; 金屬化鍍金確保極佳的可靠性 \n高功率增益\n高傳送頻率\n低噪聲\n;

NPN晶體管，采用SOT323塑料封裝。\n

BFS540_15

NPN 9 GHz wideband transistor

BFS540_2015

NPN 9 GHz wideband transistor