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BFS481

NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

NPNSiliconRFTransistor ?Forlow-noise,high-gainbroadbandamplifieratcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz F=1.4dBat900MHz ?Two(galvanic)internalisolatedTransistorsinonepackage

BFS481

Marking：RFs；Package：SOT-363；NPN Silicon RF Transistor

LowNoiseSiliconBipolarRFTransistor ?Forlownoise,high-gainbroadbandamplifiersatcollectorcurrentsfrom0.5mAto12mA ?fT=8GHz,NFmin=0.9dBat900MHz ?Two(galvanic)internalisolatedTransistorsinonepackage ?Fororientationinreelseepackageinformationbelow ?Ea

BFS481

低噪聲硅晶體管，頻率高達2.5 GHz; ·For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA\n ·fT = 8 GHz, F = 0.9 dB at 900 MHz\n ·Two (galvanic) internal isolated Transistors in one package\n ·For orientation in reel see package information in Datasheet\n ·Pb-free (RoHS compliant) package\n ·Qualification report according to AEC-Q101 available\n;

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA

BFS481

Marking：RFs；Package：SOT-363；NPN Silicon RF Transistor

BFS481

Marking：RFs；Package：SOT-363；Low Noise Silicon Bipolar RF Transistor

BFS481_07

NPN Silicon RF Transistor

BFS481_13

Low Noise Silicon Bipolar RF Transistor