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BFP843F

超低噪聲SiGe:C晶體管，可用于高達(dá)12 GHz的頻率; ? Low noise broadband NPN RF transistor based on Infineon′s reliable, high volume SiGe:C bipolar technology ? High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness ? Unique combination of high RF performance, robustness and ease of application circuit design ? Low noise figure: NFmin = 0.95 dB at 2.4 GHz and 1.1 dB at 5.5 GHz, 1.8 V, 8 mA ? High gain |S21|2 = 21.5 dB at 2.4 GHz and 16.5 dB at 5.5 GHz, 1.8 V, 15 mA ? OIP3 = 22.5 dBm at 2.4 GHz and 20 dBm at 5.5 GHz, 1.8 V, 15 mA ? Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) ? Low power consumption, ideal for mobile applications ? Thin small flat Pb-free (RoHS compliant) and halogen-free package with visible leads ? Qualification report according to AEC-Q101 available\n;

The BFP843F is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board (e.g. AppNote AN300).

BFP843F

Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

BS-A843RD

SINGLEDIGITLEDDISPLAYS

BS-C843RD

SINGLEDIGITLEDDISPLAYS

CAPA843

2DDR3LSO-DIMMsupportupto8GBmemorycapacity

CEM843

COMExpressType6CompactModulewithIntelAtomProcessorE3845

CEM843

COMExpressType6CompactModulewithIntel?Atom?ProcessorE3845

Features ●Intel?Atom?processorE3845(BayTrail) ●2DDR3L-1066/1333SO-DIMM,upto8GB ●Max.upto6lanesofPCIe ●2SATA-300 ●8USB2.0and1USB3.0 ●TPM1.2supported

CL843

Heavycastaluminumtopcoverwithembeddedheatsink

CSD-843D

NUMERIC/ALPHANUMBERICDISPLAYGENERALINFORMATION

CSD-843E

NUMERIC/ALPHANUMBERICDISPLAYGENERALINFORMATION