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BF1215

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

ETC

BF1215

Dual N-channel dual-gate MOSFET; \n\n?High forward transfer admittance to input capacitance ratio\n\n?Internal switch reduces external components\n\n?Suitable for VHF and UHF applications\n\n?Superior cross modulation performance during AGC\n\n?Two low noise gain controlled amplifiers in a single package\n\n\n;

OverviewThe BF1215 is a combination of two dual gate MOSFET amplifiers with shared source lead, shared gate2 lead and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is availiable as a SOT363 micro-miniature plastic package.\n

恩XP

BUH1215

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUH1015andBUH1015HIaremanufacturedusingMultiepitaxialMesatechnologyforcost-effectivehighperformanceanduseaHollowEmitterstructuretoenhanceswitchingspeeds. TheBUHseriesisdesignedforuseinhorizontaldeflectioncircuitsintelevisionsandmonitors. ■STM

BURNDY_YF1215UI

CuAlloyBareFerrule,SmoothFunnelEntry,12AWG,0.59L,Seamlessbbl,TinPlated,ForUseOnCuCond.

BUW1215

HIGHVOLTAGEFAST-SWITCHINGNPNPOWERTRANSISTOR

DESCRIPTION TheBUW1215ismanufacturedusingMultiepitaxialMesatechnologyforcost-effectivehighperformanceandusesaHollowEmitterstructuretoenhanceswitchingspeeds. ■STMicroelectronicsPREFERREDSALESTYPE ■HIGHVOLTAGECAPABILITY(>1500V) ■VERYHIGHSWITCHINGSPEED APPLICATI