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BF1201R

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PHI

BF1201R

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

ETC

BF1201R

N-channel dual-gate MOSFET; \n\n?High transfer admittance to input capacitance ratio\n\n?Integrated diodes between gates and source\n\n?Low noise\n\n?Source and substrate interconnected\n\n\n;

Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type Field-Effect Transistor in a plastic SOT143R package.\n

恩XP

BF1201WR

N-channeldual-gatePoLoMOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1201,BF1201RandBF1201WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpackage

PHI

BMT-1201S

BMT-1201S