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BF1105R

N-channel dual-gate MOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka

PHI

BF1105R

RF Manual 16th edition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

ETC

BF1105R

N-channel dual-gate MOSFET; \n\n?High forward transfer admittance to input capacitance ratio\n\n?Internal self-biasing circuit to ensure good cross-modulation performance\n\n?Low noise gain controlled amplifier up to 1 GHz\n\n\n;

Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type N-channel Field-Effect Transistor.\n

恩XP

BF1105WR

N-channeldual-gateMOS-FETs

DESCRIPTION EnhancementtypeN-channelfield-effecttransistorwithsourceandsubstrateinterconnected.Integrateddiodesbetweengatesandsourceprotectagainstexcessiveinputvoltagesurges.TheBF1105,BF1105RandBF1105WRareencapsulatedintheSOT143B,SOT143RandSOT343Rplasticpacka

PHI

BH-1105

ISAHalfsizeCPUCard