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8.0 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor

The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications.燫eplacement Active Part Number: BDX54C\n\n; ? High DC Current GainhFE = 2500 (Typ) @ IC = 4.0 Adc\n? Collector Emitter Sustaining Voltage@ 100 mAdcVCEO(sus) = 80 Vdc (Min)BDX53B, 54B VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C\n? Low Collector-Emitter Saturation VoltageVCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 AdcVCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc;

ONSEMI

安森美半導(dǎo)體

INTEL(英特爾)

INTEL(英特爾)

上傳：深圳市盈慧通電子有限公司

NA
T0-263

NA

上傳：深圳市旺財(cái)半導(dǎo)體有限公司

BORN
SMD0603

BORN

伯恩半導(dǎo)體

上傳：深圳市鼎欣微電子有限公司

BORN/伯恩半導(dǎo)體
SMD0603

BORN/伯恩半導(dǎo)體

上傳：深圳市羿芯誠(chéng)電子有限公司