描述 Description

The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.

特性 Features

? High DC Current Gain -hFE = 2500 (typ.) at IC = 4.0
? Collector-Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.)BDX33B, 34B VCEO(sus) = 100 Vdc (min.) - BDX33C, 34C
? Low Collector-Emitter Saturation Voltage CE(sat) = 2.5 Vdc (max.) at IC = 3.0 AdcBDX33B, 33C/34B, 34C
? Monolithic Construction with Build-In Base-Emitter Shunt resistors
? TO-220AB Compact Package
? Pb-Free Packages are Available

簡介

BDX34B屬于分立半導體產品的晶體管-雙極性晶體管（BJT）-單個。由制造生產的BDX34B晶體管 - 雙極性晶體管（BJT）- 單個分立式雙極結型晶體管 (BJT) 通常在音頻、無線電及其他應用中用于構建模擬信號放大功能。作為大批量生產的第一批半導體器件之一，對于涉及高頻開關和在大電流或高電壓下工作的應用而言，它們的特性相比某些器件類型不占優(yōu)勢，但對于需要以極小的噪聲和失真構建模擬信號的應用而言，它們仍然是首選技術。