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BD936

isc Silicon PNP Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD936

Silicon PNP Power Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

BD936

Trans GP BJT PNP 60V 3A;

NJS

New Jersey Semiconductor

BD9361GUL

6ch功率MOSFET內(nèi)置型系統(tǒng)開關(guān)穩(wěn)壓器+ 1ch LDO; ? 2.5V minimum input operating, and Supplies power for the internal circuit by step-up converter(CH1).\n? CH1 step-up converter, CH2 cross converter, CH3,4 step-down converter CH5 step-down converter controllable output voltage by external resister.CH6 boost converter for LED,\n? All channels contain internal Power MOSFET and compensation.\n? Operating frequency of 2.0 MHz (CH3,4,5) and 1.0MHz （CH1,2,6）.\n? Includes Over Voltage Protection (OVP) for CH1, 2, 6.\n? Includes LDO controllable output voltage by serial communication.\n? Contains sequence control circuit for CH1～3. It is possible to select sequence CH1?CH3?CH4?CH2 and CH1?CH4?CH3?CH2 by SEQ_CTL pin CH1, 2, 3, 4. CH5, 6, and LDO are possible to turn ON/OFF by serial communication.\n8) Built-In discharge switch (CH2,3,4) and contains off sequence control circuit for CH1～4 with inverted start-up sequence.\n9) Included cut off output voltage circuit during over current (timer latch type).\n10) Include back-gate control for CH1 with soft start function\n;

是內(nèi)置FET的數(shù)碼相機(jī)用6信道開關(guān)穩(wěn)壓器 + 單信道LDO。是最適合搭載CMOS傳感器的數(shù)碼相機(jī)等設(shè)備的電源構(gòu)成。采用小型封裝的WL-CSP，CH1～CH4內(nèi)置反饋電阻，可以較少的部件數(shù)構(gòu)成，有助于減小安裝面積。

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BD9361GUL

6ch Internal Power MOSFET System Switching Regulator 1ch LDO

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BD9361GUL-E2

6ch Internal Power MOSFET System Switching Regulator 1ch LDO

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BD936F

isc Silicon PNP Power Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

BD936F

Silicon PNP Power Transistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

技術(shù)參數(shù)

  • Configuration：

    Single

  • Material：

    Si

  • Maximum Collector Base Voltage：

    60V

  • Maximum Collector Emitter Saturation Voltage：

    0.6@0.1A@1AV

  • Maximum Collector Emitter Voltage：

    60V

  • Maximum DC Collector Current：

    3A

  • Maximum Emitter Base Voltage：

    5V

  • Maximum Operating Temperature：

    150?C

  • Maximum Power Dissipation：

    30000mW

  • Maximum Transition Frequency：

    3(Min)MHz

  • Type：

    PNP

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更多BD936供應(yīng)商 更新時(shí)間2025-7-30 16:01:00

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