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BCP56-10T-Q

Marking：P5610T；Package：SOT223；80 V, 1 A NPN medium power transistors

Featuresandbenefits ?HighcollectorcurrentcapabilityICandICM ?Threecurrentgainselections ?Highpowerdissipationcapability ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BCP56-10T-QF

Package：TO-261-4，TO-261AA；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 80V 1A SOT223

Nexperia USA Inc.

BCP56-10T-QX

Package：TO-261-4，TO-261AA；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 80V 1A SOT223

Nexperia USA Inc.

BCX56-10

NPNTRANSISTOR

VOLTAGE45~80.0VoltsCURRENT1.0Ampers FEATURES ●Highcurrent(max.1A). ●Lowvoltage(max.80V).

BCX56-10

NPNSiliconAFTransistors

FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCX51…BCX53(PNP)

BCX56-10

NPNSiliconAFTransistors

FEATURES ●ForAFdriverandoutputstages ●Highcollectorcurrent ●Lowcollector-emittersaturationvoltage ●Complementarytypes:BCX51…BCX53(PNP)

BCX56-10

NPNPlastic-EncapsulateTransistors

Features ?LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ?PowerDissipation:PCM=0.5W(Tamb=25°C) ?CollectorCurrent:ICM=1.0A ?Collector-BaseVoltage:V(BR)CBO=100V ?Marking:BCX56=BH,BCX56-10=BK,BCX56-16=BL ?EpoxymeetsU

BCX56-10

NPNPlastic-EncapsulateTransistors

BCX56-10

80V,1ANPNmediumpowertransistors

Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified

BCX56-10

80V,1ANPNmediumpowertransistors

1.Generaldescription NPNmediumpowertransistorsinaSOT89(SC-62)flatleadSurface-MountedDevice(SMD) plasticpackage 2.Featuresandbenefits ?HighcollectorcurrentcapabilityICandICM ?Threecurrentgainselections ?Highpowerdissipationcapability 3.Applications ?Li