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BC856G

Silicon PNP transistor in a SOT-23 Plastic Package

BC856G-X-AE3-R

SWITCHING AND AMPLIFIER APPLICATIONS

BC856G-X-AE3-R

SWITCHING AND AMPLIFIER APPLICATION

BC856G-X-AL3-R

SWITCHING AND AMPLIFIER APPLICATIONS

BC856G-X-AL3-R

SWITCHING AND AMPLIFIER APPLICATION

BC856-HF

GeneralPurposeTransistor

GeneralPurposeTransistor RoHSDevice HalogenFree Features ???????-Ideallysuitedforautomaticinsertion -Powerdissipation PCM:0.25W(@TA=25°C) -Lowcurrent.(max.100mA) -Collector-basevoltage VCBO:BC856=-80V BC857=-50V BC858=-30V

BC856-Q

65V,100mANPNgeneral-purposetransistors

Featuresandbenefits ?General-purposetransistors ?SMDplasticpackages ?Twodifferentgainselections ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BC856S

PNPSiliconAFTransistorArray

PNPSiliconAFTransistorArrays ?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Two(galvanic)internalisolatedtransistorwithgoodmatchinginonepackage ?BC856S/U,BC857S:Fororientationinreelseepackageinformation

BC856S

SurfacemountSi-EpitaxialPlanarTransistors

SurfaceMountGeneralPurposeSi-Epi-PlanarDouble-Transistors ?Powerdissipation300mW ?PlasticcaseSOT-363 ?Weightapprox.0.01g ?PlasticmaterialhasULclassification94V-0 ?Standardpackagingtapedandreeled

BC856S

PNPSiliconAFTransistorArray(ForAFinputstagesanddriverapplicationsHighcurrentgainLowcollector-emittersaturationvoltage)

?ForAFinputstagesanddriverapplications ?Highcurrentgain ?Lowcollector-emittersaturationvoltage ?Two(galvanic)internalisolatedTransistorswithhighmatchinginonepackage