訂購數(shù)量 | 價格 |
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1+ |
首頁>BC856BWT1G>芯片詳情
BC856BWT1G_ONSEMI/安森美半導(dǎo)體_兩極晶體管 - BJT 100mA 80V PNP益百分電子
- 詳細(xì)信息
- 規(guī)格書下載
產(chǎn)品屬性
- 類型
描述
- 型號:
BC856BWT1G
- 功能描述:
兩極晶體管 - BJT 100mA 80V PNP
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
PNP 集電極—基極電壓
- VCBO:
集電極—發(fā)射極最大電壓
- VCEO:
- 40 V 發(fā)射極 - 基極電壓
- VEBO:
- 6 V
- 增益帶寬產(chǎn)品fT:
直流集電極/Base Gain hfe
- Min:
100 A
- 安裝風(fēng)格:
SMD/SMT
- 封裝/箱體:
PowerFLAT 2 x 2
供應(yīng)商
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