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BC847BSH

45V,100mANPN/NPNgeneral-purposedoubletransistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?High-temperatureapplicationsupto175°C

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC847BSH-Q

45V,100mANPN/NPNgeneral-purposedoubletransistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?High-temperatureapplicationsupto175°C ?QualifiedaccordingtoA

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC847BSQ

DUALNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?BVCEO>45V ?Ultra-SmallSurfaceMountPackage ?IdeallySuitedforAutomatedInsertion ?ForswitchingandAFAmplifierApplication ?TotallyLead-Free&FullyRoHScompliant(Notes1&2) ?HalogenandAntimonyFree.GreenDevice(Note3) ?TheBC847BSQissuitableforautomoti

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

BC847BS-Q

45V,100mANPN/NPNgeneral-purposetransistor

Featuresandbenefits ?Lowcollectorcapacitance ?Lowcollector-emittersaturationvoltage ?Closelymatchedcurrentgain ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors ?QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotive

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國(guó))有限公司

BC847BS-TP

DualNPNSmallSignalTransistor300mW

Features ●LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) ●IdeallySuitedforAutomaticInsertion ●Ultra-SmallSurfaceMountPackage ●ForSwitchingandAFAmplifierApplications ●EpoxymeetsUL94V-0flammabilityrating ●MoisureSensitivi

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

BC847BT

NPNSiliconAFTransistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes: BC856T,BC857T, BC858T,BC859T,BC860T

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BC847BT

NPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features ?BVCEO>45V ?IC=100mACollectorCurrent ?EpitaxialPlanarDieConstruction ?Ultra-SmallSurfaceMountPackage ?ComplementaryPNPType:MMBT3906T ?TotallyLead-Free&FullyRoHSCompliant(Notes1&2) ?HalogenandAntimonyFree.“Green”Device(Note3) ?Qualifie

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

BC847BT

NPNgeneralpurposetransistors

DESCRIPTION NPNtransistorinanSC-75plasticpackage. PNPcomplements:BC856TandBC857T. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitchingandamplification,especially inportablecommunicationequipment ?Electronicdataproce

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BC847BT

GeneralPurposeTransistorNPNSilicon

GeneralPurposeTransistor NPNSilicon p/bLead(Pb)-Free

WEITRON

Weitron Technology

BC847BT

45V,100mANPNgeneral-purposetransistors

DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC856,BC857andBC858. FEATURES ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitchingandamplification.

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

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1637+
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21+
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15000
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26094
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45000
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