首頁(yè) >BC847B/TH>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
GeneralPurposeTransistorNPNDuals GeneralPurposeTransistor NPNDuals | WEITRON Weitron Technology | WEITRON | ||
DualGeneralPurposeTransistors DualGeneralPurposeTransistors NPNDuals Thesetransistorsaredesignedforgeneralpurposeamplifierapplications.TheyarehousedintheSOT–363/SC–88whichisdesignedforlowpowersurfacemountapplications. | YEASHINYea Shin Technology Co., Ltd 亞昕科技亞昕科技股份有限公司 | YEASHIN | ||
NPNSiliconEpitaxialGeneralPurposeTransistors | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
SOT-363Plastic-EncapsulateTransistors APPLICATION Thisdeviceisdesignedforgeneralpurposeamplifierapplications | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
Plastic-EncapsulateTransistors FEATURES ?Twotransistorsinonepackage ?Reducesnumberofcomponentsandboardspace ?Nomutualinterferencebetweenthetransistors | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司 | GWSEMI | ||
NPNgeneralpurposetransistors DESCRIPTION NPNtransistorencapsulatedinanultrasmallSC-89(SOT490)plasticSMDpackage. PNPcomplements:BC856F,BC857FandBC858Fseries. FEATURES ?PowerdissipationcomparabletoSOT23 ?Lowcurrent(max.100mA) ?Lowvoltage(max.65V). APPLICATIONS ?Generalpurposeswitching | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
NPNSiliconAFTransistors | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
45VNPNSMALLSIGNALTRANSISTOR Features ?BVCEO>45V ?IC=100mAHighCollectorCurrent ?PD=435mWPowerDissipation ?0.48mm2PackageFootprint,16timessmallerthanSOT23 ?0.4mmHeightPackageMinimizingOff-BoardProfile ?ComplementaryPNPTypeBC857BFA ?TotallyLead-Free&FullyRoHSCompliant(Notes1&a | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES | ||
45VNPNSMALLSIGNALTRANSISTOR Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features ?BVCEO>45V ?IC=100mAHighCollectorCurrent ?PD=435mWPowerDissipation ?0.48mm2PackageFootprint,16TimesSmallerthanSOT23 ?0.4mmHeightPac | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES | ||
45VNPNSMALLSIGNALTRANSISTORINDFN0606 Features BVCEO>45V IC=100mAHighCollectorCurrent PD=925mWPowerDissipation 0.36mm2PackageFootprint,40SmallerthanDFN1006 0.4mmHeightPackageMinimizingOff-BoardProfile ComplementaryPNPTypeBC857BZ TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimon | DIODESDiodes Incorporated 美臺(tái)半導(dǎo)體 | DIODES |
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