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BC2302

Marking：2302；Package：SOT23；Plastic-Encapsulate MOSFETS

Description TheBC2302usesadvancedtrenchtechnologytoprovideexcellentR lowgatechargeandoperationwithgatevoltagesaslowas2.5V. ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. DS(ON), Application Batteryprotection Loadswitch Uni

BC2302ET

Marking：S2；Package：SOT-523；N-Channel MOSFET

Feature ?20VN-ChannelMOSFETHighDenseDesign. ?RDS(ON)=280m?(typ.)@VGS=4.5V ?RDS(ON)=360m?(typ.)@VGS=2.5V ?ReliableandRugged ?ESDProtected Applications ?PortableEquipmentandBatteryPowerSystems

BC2302W

Marking：2302；Package：SOT-323；Plastic-Encapsulate MOSFETS

FEATURE ?TrenchFETPowerMOSFET APPLICATIONS ?LoadSwitchforPortableDevices ?DC/DCConverter

BLM2302

N-ChannelEnhancementModePowerMOSFET

BM2302

N-Channel1.25-W,2.5-VMOSFET

BU2302

CRtimer

BU2302F

CRtimer

CES2302

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.0A,RDS(ON)=72mΩ@VGS=4.5V. RDS(ON)=110mΩ@VGS=2.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CES2302

N-Channel20V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC APPLICATIONS ?DC/DCConverters ?LoadSwitchforPortableApplications

CES2302A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,4.4A,RDS(ON)=40mW@VGS=4.5V. RDS(ON)=70mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.