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BB301C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Features ?BuildinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode. Withstandupto200VatC=200pF, Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301C

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301C

Built in Biasing Circuit MOS FET IC VHF RF Amplifier; ? Built in Biasing Circuit;\n?? To reduce using parts cost & PC board space.\n? Low noise characteristics;\n?? (NF = 1.3 dB typ. at f = 200 MHz)\n? Withstanding to ESD;\n?? Built in ESD absorbing diode.\n?? Withstand up to 200V at C=200pF, Rs=0 conditions.\n? Provide mini mold packages; CMPAK-4(SOT-343mod);

RenesasRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301CAW-TL-E

Built in Biasing Circuit MOS FET IC VHF RF Amplifier

Features ?BuiltinBiasingCircuit; Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics; (NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD; BuiltinESDabsorbingdiode. Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackag

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301M

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB301M

BuildinBiasingCircuitMOSFETICUHFRFAmplifier

Features ?BuildinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuildinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions.

HitachiHitachi Semiconductor

日立日立公司

BB301MAW-TL-E

BuiltinBiasingCircuitMOSFETICVHFRFAmplifier

Features ?BuiltinBiasingCircuit;Toreduceusingpartscost&PCboardspace. ?Lownoisecharacteristics;(NF=1.3dBtyp.atf=200MHz) ?WithstandingtoESD;BuiltinESDabsorbingdiode.Withstandupto200VatC=200pF,Rs=0conditions. ?Provideminimoldpackages;MPAK-4(SOT-1

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

BB-301S

BaseboardforoneTMCM-301andupto3TMCM-035with24VI/Os

TRINAMIC

TRINAMIC Motion Control GmbH & Co. KG.

BC301

PNPSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

NPNSILICONAFMEDIUMPOWERAMPLIFIERS&SWITCHES

MICRO-ELECTRONICS

Micro Electronics

BC301

SmallSignalTransistors

CentralCentral Semiconductor Corp

美國中央半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    BB301C

  • 制造商：

    HITACHI

  • 制造商全稱：

    Hitachi Semiconductor

  • 功能描述：

    Build in Biasing Circuit MOS FET IC UHF RF Amplifier

供應(yīng)商型號品牌批號封裝庫存備注價格
renesas
24+
SOT-343
750
詢價
RENESAS/瑞薩
23+
SOT343
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
RENESAS
25+
SOT343
3200
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售
 詢價
RENESAS/瑞薩
24+
NA/
9705
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價
N/A
23+
80000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
N/A
23+
80000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
RENESAS/瑞薩
25+
SOT343
9705
原裝正品,假一罰十!
 詢價
RENESAS/瑞薩
24+
SOT343
9705
公司現(xiàn)貨庫存,支持實(shí)單
 詢價
RENESAS/瑞薩
24+
SOT343
60000
詢價
RENESAS
24+
SOT343
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
更多BB301C供應(yīng)商 更新時間2025-7-29 16:30:00

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