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BS170L

N-ChannelEnhancement-ModeMOSTransistor

DESCRIPTION The2N7000utilizesCalogic’sverticalDMOStechnology.ThedeviceiswellsuitedforswitchingapplicationswhereBVof60Vandlowonresistance(under5ohms)arerequired.The2N7000ishousedinaplasticTO-92package.

BS170P

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

BS170P

60VN-CHANNELENHANCEMENTMODEVERTICALDMOSFET

Features BVDSS>60V RDS(ON)≤5Ω@VGS=10V ID=270mAMaximumContinuousDrainCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability

BS170PSTZ

60VN-CHANNELENHANCEMENTMODEVERTICALDMOSFET

Features BVDSS>60V RDS(ON)≤5Ω@VGS=10V ID=270mAMaximumContinuousDrainCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability

BS170RLRA

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

BS170RLRA

SmallSignalMOSFET500mA,60VoltsN??hannelTO??2(TO??26)

BS170RLRAG

SmallSignalMOSFET500mA,60VoltsN??hannelTO??2(TO??26)

BS170RLRAG

SmallSignalMOSFET500mA,60Volts

SmallSignalMOSFET500mA,60Volts N?ChannelTO?92(TO?226) Features ?Pb?FreePackageisAvailable*

BS170RLRM

SmallSignalMOSFETSmallSignalMOSFETSmallSignalMOSFET

GeneralDescription TheseN-ChannelenhancementmodefieldeffecttransistorsareproducedusingONSemiconductorsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.The

BS170RLRM

SmallSignalMOSFET500mA,60VoltsN??hannelTO??2(TO??26)