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BAS116LS

絲印：9C；Package：DFN1006BD-2；Low-leakage diode

1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Switchingtime:max.trr=3μs ?Lowleakagecurrent:max.IR=5nA ?Repetitivepeakreversevolt

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

NEXPERIA

BAS116LS-Q

絲?。?a target="_blank" title="Marking" href="/9c/marking.html">9C；Package：DFN1006BD-2；Low-leakage diode

1.Generaldescription Low-leakagediodeinanultrasmallDFN1006BD-2(SOD882BD)leadlessSurface-MountedDevice (SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits ?Switchingtime:max.trr=3μs ?Lowleakagecurrent:max.IR=5nA ?Repetitivepeakreversevolt

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

NEXPERIA

BAS116LT1

Switching Diode

Thisswitchingdiodehasthefollowingfeatures: ?LowLeakageCurrentApplications ?MediumSpeedSwitchingTimes ?Availablein8mmTapeandReel UseBAS116LT1toorderthe7inch/3,000unitreel UseBAS116LT3toorderthe13inch/10,000unitreel

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BAS116LT1

Switching Diode

Thisswitchingdiodehasthefollowingfeatures: ?LowLeakageCurrentApplications ?MediumSpeedSwitchingTimes ?Availablein8mmTapeandReel UseBAS116LT1toorderthe7inch/3,000unitreel UseBAS116LT3toorderthe13inch/10,000unitreel

LRCLeshan Radio Company

樂山無線電樂山無線電股份有限公司

LRC

BAS116LT1

Switching Diode

Features ?LowLeakageCurrentApplications ?MediumSpeedSwitchingTimes ?Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel ?SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC?Q101 Q

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BAS116LT1

SURFACE MOUNT SWITCHING DIODE

SURFACEMOUNTSWITCHINGDIODE ?LowLeakageCurrentApplications ?MediumSpeedSwitchingTimes

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳實業(yè)有限公司

WINNERJOIN

BAS116LT1D

Switching Diode

Features ?LowLeakageCurrentApplications ?MediumSpeedSwitchingTimes ?Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel ?SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC?Q101 Q

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BAS116LT1G

Switching Diode

Features ?LowLeakageCurrentApplications ?MediumSpeedSwitchingTimes ?Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel ?SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC?Q101 Q

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BAS116LT1G

Switching Diode

Features ?LowLeakageCurrentApplications ?MediumSpeedSwitchingTimes ?Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel ?SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC?Q101 Q

ONSEMION Semiconductor

安森美半導體安森美半導體公司

BAS116LT3G

Switching Diode

Features ?LowLeakageCurrentApplications ?MediumSpeedSwitchingTimes ?Availablein8mmTapeandReel UseBAS116LT1Gtoorderthe7inch/3,000unitreel ?SandNSVPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC?Q101 Q

ONSEMION Semiconductor

安森美半導體安森美半導體公司

技術參數

  • Peak Reverse Repetitive Voltage：

    400V

  • Peak Reverse Recovery Time：

    1000ns

  • Peak Reverse Current：

    0.25uA

  • Peak Non-Repetitive Surge Current：

    4A

  • Peak Forward Voltage：

    1.1@0.3AV

  • Operating Junction Temperature：

    -65 to 150°C

  • Minimum Operating Temperature：

    -65°C

  • Maximum Power Dissipation：

    75000mW

  • Maximum Operating Temperature：

    150°C

  • Maximum Continuous Forward Current：

    0.35A

  • Configuration：

    Single

供應商型號品牌批號封裝庫存備注價格
PH
23+
DO-35
5000
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PHI
24+
DIP
2987
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DIP
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
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ON
24+/25+
2423
原裝正品現貨庫存價優(yōu)
 詢價
ON
SOT23-3
1800
正品原裝--自家現貨-實單可談
 詢價
DISCRETE
3000
PH3
852000
詢價
INFINEON
23+
SOT-23
7936
詢價
恩XP
2015+
SOT-23
28989
一級代理原裝現貨,特價熱賣!
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PHI
24+
原廠封裝
9000
原裝現貨假一罰十
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ON/ONSemiconductor/安森
24+
SOT-23
9028
新進庫存/原裝
 詢價
更多BAS11供應商 更新時間2025-7-14 17:58:00

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