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B9

型號(hào)：BSS84AKQB；Package：DFN1110D-3；50 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inanultrasmallDFN1110D-3 (SOT8015)leadlessSurface-MountedDevice(SMD)plasticpackageusingTrenchMOSFET technology. 2.Featuresandbenefits ?Logic-levelcompatible ?Sidewettableflanksforoptical

B9

型號(hào)：BZT52H-C4V3；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

B9

型號(hào)：BZT52H-C4V3-Q；Package：SOD123F；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD123FsmallandflatleadSurface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:≤830mW ?Threetoleranceseries:±1,±2andapproximately±5 ?Wideworkingvoltagerange:nominal2.

B9

型號(hào)：BZX84C10；Package：SOT-23；Silicon Planar Zener Diodes

■SiliconPlanarZenerDiodes ThisseriesofZenerdiodesisofferedintheconvenient,surfacemountplasticSOT-23package.Thesedevicesaredesignedtoprovidevoltageregulationwithminimumspacerequirement.Theyarewellsuitedforapplicationssuchascellularphones,handheldportables

B9

型號(hào)：BZX84-C62；Package：SOT23；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

B9

型號(hào)：BZX84-C62-Q；Package：TO-236AB；Voltage regulator diodes

1.Generaldescription Low-powervoltageregulatordiodesinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD) plasticpackage. ThediodesareavailableinthenormalizedE24±1(BZX84-A),±2(BZX84-B)and approximately±5(BZX84-C)tolerancerange.Theseriesincludes37breakdownvolt

B9

型號(hào)：BZX884-C5V1；Package：DFN1006-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanSOD882(DFN1006-2)leadlessultrasmallSurface-Mounted Device(SMD)plasticpackage. 2.Featuresandbenefits ?Totalpowerdissipation:Ptot≤250mW ?Wideworkingvoltagerange:nominal2.4Vto75V(E24range) ?Twotolerance

B9

型號(hào)：EMB9；Package：EMT6；General purpose (dual digital transistors)

Features 1)TwoDTA144YsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3 automaticmountingmachines. 3)Transistorelementsareindependent,eliminating interference. 4)Mountingcostandareacanbecutinhalf.

B9

型號(hào)：EMB9；Package：EMT6；General purpose dual digital transistors

Features 1)TwoDTA144YsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3 automaticmountingmachines. 3)Transistorelementsareindependent,eliminating interference. 4)Mountingcostandareacanbecutinhalf.

B9

型號(hào)：IMB9A；Package：SMT6；General purpose dual digital transistors

Features 1)TwoDTA144YsinaEMTorUMTorSMTpackage. 2)MountingpossiblewithEMT3orUMT3orSMT3 automaticmountingmachines. 3)Transistorelementsareindependent,eliminating interference. 4)Mountingcostandareacanbecutinhalf.