首頁 >B55NF03L>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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N-CHANNEL30V-0.01ohm-55AD2PAKSTripFET]POWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize? strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-CHANNEL30V-0.01W-55ATO-220/D2PAK/I2PAKSTripFETIIPOWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize? strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-channel30V,0.01廓,55A,I?PAKSTripFET??IIPowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=55A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
N-CHANNEL30V-0.01W-55ATO-220/D2PAK/I2PAKSTripFETIIPOWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize? strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS | ||
N-CHANNEL30V-0.01ohm-55ATO-220/D2PAK/I2PAKSTripFET??IIPOWERMOSFET DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize? strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowon resistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforea | STMICROELECTRONICSSTMicroelectronics 意法半導體意法半導體集團 | STMICROELECTRONICS |
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