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B3

型號：1PS301；Package：SC-70；Dual high-speed switching diode

Featuresandbenefits ?Highswitchingspeed:trr?4ns ?Repetitivepeakreversevoltage: VRRM?85V ?Reversevoltage:VR?80V ?AEC-Q101qualified ?Lowcapacitance:Cd?1.5pF ?Repetitivepeakforwardcurrent: IFRM?500mA ?VerysmallSMDplasticpackage

B3

型號：1SS184；Package：SOT-23；Surface mount switching diode

FEATURES ●LowforwardvoltageVF=0.9V(typ). ●Smalltotalcapacitance. ●Fastreverserecoverytime:trr=1.6ns(typ). APPLICATIONS ●Highspeedswitchingapplication.

B3

型號：1SS184；Package：SOT-23；Switching Diode

Features ●SmallPackage ●Lowforwardvoltage:VF(3)=0.9V(Typ.) ●FastReverseRecoveryTime:trr=1.6ns(Typ.) ●SmallTotalCapacitance:CT=0.9pF(Typ.)

B3

型號：1SS184；Package：SOT-23；Switching DIODES

FEATURES ?Lowforwardvoltage:VF(3)=0.9V(typ.) ?Fastreverserecoverytime:trr=1.6ns(typ.)

B3

型號：1SS184W-CAR；Package：SOT-323；Silicon Epitaxial Planar Switching Diode

FEATURES Lowforwardvoltage Fastreverserecoverytime -CARforautomotiveandotherapplications requiringuniquesiteandcontrolchange requirements;AEC-Q101qualifiedandPPAP capable

B3

型號：74AVC2T245GU-Q100；Package：XQFN10；2-bit dual supply translating transceiver with configurable voltage translation; 3-state

1.Generaldescription The74AVC2T245-Q100isa2-bit,dualsupplytransceiverthatenablesbidirectionallevel translation.Thedevicecanbeusedastwo1-bittransceiversorasa2-bittransceiver.Itfeatures two2-bitinput-outputports(AnandBn)anddirectioncontrolinputs(DIRn),ano

B3

型號：ACDBUC0130-HF；Package：SOD-523F；SMD Schottky Barrier Diode

Features -Lowforwardvoltage. -Designedformountingonsmallsurface. -Extremelythinpackage. -Majoritycarrierconduction. -AEC-Q101Qualified&PPAP.

B3

型號：BC69PA；Package：HUSON3；20 V, 2 A PNP medium power transistors

Featuresandbenefits ?Highcurrent ?Threecurrentgainselections ?Highpowerdissipationcapability ?Exposedheatsinkforexcellentthermalandelectricalconductivity(SOT89,SOT1061) ?LeadlessverysmallSMDplasticpackagewithmediumpowercapability(SOT1061) ?AEC-Q101qualified

B3

型號：BC817-16QB；Package：DFN1110D-3；45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits ?Highpowerdissipationcapability ?Highcurrent ?Threecurrentgainselections ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?AEC-Q101qualified

B3

型號：BC817-16QB-Q；Package：DFN1110D-3；45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits ?Highpowerdissipationcapability ?Highcurrent ?Threecurrentgainselections ?SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint ?SmallerfootprintcomparedtoconventionalleadedSMDpackages ?Lowpackageheightof0.5mm ?Qualifiedaccordingto