描述 Description

The B10G3741N55D is a 3-stage fully integrated asymmetrical Doherty MMIC solution using Ampleon’s state of the art GEN10 LDMOS technology. The carrier and peaking device, input splitter, output combiner and pre-match are integrated in a single package. This multiband device is perfectly suited as a final stage for small cells and massive MIMO applications in the frequency range from 3700 MHz to 4100 MHz. Available in PQFN outline.

特性 Features

? Integrated input splitter
? Integrated output combiner
? 30 Ω output impedance thanks to integrated pre-match
? Very high efficiency thanks to asymmetry
? Designed for wideband operation (frequency 3700 MHz to 4100 MHz)
? Independent control of carrier and peaking bias
? Integrated ESD protection
? Source impedance 50 Ω; high power gain
? For RoHS compliance see the product details on the Ampleon website

應(yīng)用 Application

? RF power MMIC for multi-carrier and multi-standard 5G, W-CDMA and LTE base stations in the 3700 MHz to 4100 MHz frequency range

簡介

B10G3741N55D屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-射頻。由制造生產(chǎn)的B10G3741N55D晶體管 - FET，MOSFET - 射頻射頻晶體管、FET 和 MOSFET 是具有三個端子的半導(dǎo)體器件，器件中電流受電場控制。該系列器件用于涉及射頻的設(shè)備。用于放大或切換信號或功率的晶體管類型包括：E-pHEMT、LDMOS、MESFET、N 溝道、P 溝道、pHEMT、碳化硅、2 N 溝道和 4 N 溝道。