最新无码a∨在线观看,一本av高清一区二区三区,亚洲熟妇色l20p,宅男噜噜69av,中出あ人妻熟女中文字幕

SR05-04A

Marking：B05B；Package：SOT-26；Transient Voltage Suppressors for ESD Protection

Feature 100WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsfourI/Olines Lowclampingvoltage Workingvoltages:5V Lowleakagecurrent IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(Lightning)4A(8/20μs) Applications USB2.0Power

TPS6286B081VBMR

Marking：B081；Package：VQFN-HR；TPS6286Axx and TPS6286Bxx 2.4V to 5.5V Input, 6A, 8A, and 10A, Synchronous Step-Down Converter in 2mm × 3mm QFN Package With FB/I2C Interface

1Features ?2.4Vto5.5Vinputvoltagerange ?8mΩand8mΩinternalpowerMOSFETs ?5.1μAoperatingquiescentcurrent ?1.2MHzswitchingfrequency ?100%dutycyclemode ?0.7%outputvoltageaccuracy ?ForcedPWMorpowersavemode ?DCS-Controltopology(constanton-time) ?FB

74AHCT1G00DBVRG4

Marking：B00G；Package：SOT-23；Single 2-Input Positive-NAND Gate

74AHCT1G00DBVTG4

Marking：B00G；Package：SOT-23；Single 2-Input Positive-NAND Gate

74AHCT1G08DBVRE4

Marking：B08G；Package：SOT-23；Single 2-Input Positive-AND Gate

74AHCT1G08DBVRG4

Marking：B08G；Package：SOT-23；Single 2-Input Positive-AND Gate

DB006NG

Marking：B006N；Package：TO-252；N-Channel MOSFET uses advanced trench technology

NB003PG

Marking：B003P；Package：DFN5*6-8；P-Channel MOSFET uses advanced trench technology

PQMD10

Marking：B010；Package：DFN1010B-6；NPN/PNP resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

PQMD13

Marking：B011；Package：DFN1010B-6；NPN/PNP resistor-equipped transistors;R1 = 4.7 k廓, R2 = 47 k廓