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AUIRLR120NTRL規(guī)格書詳情
AUTOMOTIVE GRADE
描述 Description
Specifically designed for Automotive applications, this cellular design of HEXFET? Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
? Advanced Planar Technology
? Logic-Level Gate Drive
? Low On-Resistance
? Dynamic dV/dT Rating
? 175oC Operating Temperature
? Fast Switching
? Fully Avalanche Rated
? Repetitive Avalanche Allowed up to Tjmax
? Lead-Free, RoHS Compliant
? Automotive Qualified*
產(chǎn)品屬性
- 型號:
AUIRLR120NTRL
- 功能描述:
MOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
24+ |
TO-252 |
9908 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
Infineon/英飛凌 |
24+ |
DPAK |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon(英飛凌) |
23+ |
標準封裝 |
7000 |
公司只做原裝,可來電咨詢 |
詢價 | ||
Infineon(英飛凌) |
24+ |
標準封裝 |
7000 |
原廠原裝現(xiàn)貨訂貨價格優(yōu)勢終端BOM表可配單提供樣品 |
詢價 | ||
INFINEON |
23+ |
TO-252-3, DPak (2 Leads + Tab |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
TO-252-3, DPak (2 Leads + Tab |
7000 |
詢價 | |||
Infineon(英飛凌) |
2447 |
DPAK |
115000 |
3000個/卷一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長 |
詢價 | ||
INFINEON |
25+ |
TO-252 |
3000 |
原廠原裝,價格優(yōu)勢 |
詢價 | ||
Infineon/英飛凌 |
2025+ |
DPAK |
8000 |
詢價 | |||
Infineon(英飛凌) |
24+ |
DPAK |
10048 |
原廠可訂貨,技術(shù)支持,直接渠道。可簽保供合同 |
詢價 |