首頁 >ATTINY804-SSNR>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SiliconVariableCapacitanceDiode(ForFMtunersMonolithicchipwithcommoncathodeforperfecttrackingofbothdiodes) SiliconVariableCapacitanceDiode ●ForFMtuners ●Monolithicchipwithcommoncathodeforperfecttrackingofbothdiodes ●Uniformsquarelawcharacteristics ●IdealHifituningdevicewhenusedinlow-distortion,back-to-backconfiguration | SIEMENSSiemens Semiconductor Group 西門子德國西門子股份公司 | SIEMENS | ||
SiliconEpitaxialPlanarDualCapacitanceDiode Features ?SiliconEpitaxialPlanarDiode ?Commoncathode ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications Tuningofseparateresonantcircuits, push-pullcircuitsinFMrange, especiallyforcarradios MechanicalData Case:SOT-23 | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
SiliconVariableCapacitanceDiode SiliconVariableCapacitanceDiode ?ForFMtuners ?Monolithicchipwithcommoncathodeforperfecttrackingofbothdiodes ?Uniformsquarelawcharacteristics ?IdealHiFituningdevicewhenusedinlow-distortion,back-to-backconfiguration ?Pb-free(ROHScompliant)package1) ?Qualif | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconVariableCapacitanceDiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
VHFvariablecapacitancedoublediode DESCRIPTION TheBB804isavariablecapacitancedoublediodewithacommoncathode,fabricatedinplanartechnology,andencapsulatedintheSOT23smallplasticSMDpackage. FEATURES ?Selectedcapacitancerange ?SmallplasticSMDpackage ?C8:26pF;ratio:1.7 ?Lowseriesresistance. AP | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
VHFvariablecapacitancedoublediode DESCRIPTION TheBB804isavariablecapacitancedoublediodewithacommoncathode,fabricatedinplanartechnology,andencapsulatedintheSOT23smallplasticSMDpackage. FEATURES ?Selectedcapacitancerange ?SmallplasticSMDpackage ?C8:26pF;ratio:1.7 ?Lowseriesresistance. AP | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
DiscreteSemiconductors DiscretsSemiconductors FETsForVHFAmplifiersandMixers ForLowNoiseAmplifiers Lowleakage/NoiseCurrent DualGateMosfets(NChannelDepletion) Lowleakge | AMMSEMIAmerican Microsemiconductor 美國微半導體有限公司 | AMMSEMI | ||
CATVamplifiermodule DESCRIPTION HybridamplifiermoduleinaSOT115Jpackageoperatingatavoltagesupplyof24V(DC). FEATURES ?Excellentlinearity ?Extremelylownoise ?Siliconnitridepassivation ?Ruggedconstruction ?Goldmetallizationensuresexcellentreliability. APPLICATIONS CATVsystemsi | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
CATVamplifiermodule DESCRIPTION HybridamplifiermoduleinaSOT115Jpackageoperatingatavoltagesupplyof24V(DC). FEATURES ?Extremelyflatgainresponse ?Excellentlinearity ?Extremelylownoise ?Siliconnitridepassivation ?Excellentreturnlossproperties ?Ruggedconstruction ?Goldmetallizat | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
SILICONBRIDGERECTIFIERS | HY HY ELECTRONIC CORP. | HY |
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