描述 Description

The AT28LV256 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 200 μA.

特性 Features

? Fast Read Access Time - 200 ns

? Automatic Page Write Operation

Internal Address and Data Latches for 64-Bytes

Internal Control Timer

? Fast Write Cycle Times

Page Write Cycle Time: 10 ms Maximum

1 to 64-Byte Page Write Operation

? Low Power Dissipation

15 mA Active Current

20 μA CMOS Standby Current

? Hardware and Software Data Protection

? DATA Polling for End of Write Detection

? High Reliability CMOS Technology

Endurance: 10,000 Cycles

Data Retention: 10 Years

? Single 3.3V ± 5 Supply

? JEDEC Approved Byte-Wide Pinout

? Commercial and Industrial Temperature Ranges