描述 Description

The Microchip AT28C256 is a high-performance256Kbit Parallel EEPROM available in both Industrial and Military temp ranges, offeringaccess times to 150ns with power dissipation of 440mW. Deselected, CMOS standbycurrent is less than 200μA.? Accessedlike static RAM for the read or write cycle without external components, itcontains a 64-byte page register to allow writing of up to 64bytessimultaneously. Features an internal ErrorCorrection Circuit for extended endurance and improved data retention, inMilitary version. Optional Software DataProtection mechanism guards against inadvertent writes; and an extra 64bytes of EEPROM enables device identification or tracking.The AT28C256 is also available DUAL MARKED where applicable with the appropriate Standard Military Drawing Number - 5962-88525xxxx.? See the?datasheet for exact?MIL product?availability.

特性 Features

32 Kbits x 8 (256 Kbit)
5V ± 10% Supply
Parallel Interface
AT28C256E - High Endurance 100K Write Cycles Option
AT28C256F - 3 ms Fast Write Option
150ns access time
Self-Timed Erase and Write Cycles (10 ms max)
Page Write and Byte Write
Data Polling for end of write detection
Available in Green (Pb/Halide-free) Packaging
Low Power Consumption
Read / Write current 40 mA (Max)
32-lead, Plastic J-leaded Chip Carrier (PLCC)
Standby current TTL 2 mA (Max), CMOS 200 μA (Max)
Write-Protection
Hardware Protection
Software Data Protect
Data retention > 10 years
Temperature Ranges
Standard Temperature Range: -40°C to 85°C
Military Temperature Range: -55°C to 125°C
28-lead, 0.600\" Wide, Plastic Dual Inline Package (PDIP)
28-lead, 0.300\" Wide, Plastic Gull Wing Small Outline (SOIC)
28-lead, Plastic Thin Small Outline Package (TSOP)
Available in SMD?Dual marked (5962-88525xxxx) CERAMIC Hermetic Packaging
28-Lead, 0.600\" Wide, Non-Windowed, Ceramic Dual Inline (Cerdip)
28-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package (Flatpack)
32-Pad, Non-windowed, Ceramic, Leadless Chip Carrier (LCC)

簡介

AT28C256屬于集成電路（IC）的存儲器。由制造生產(chǎn)的AT28C256存儲器存儲器是集成電路上用作數(shù)據(jù)存儲設(shè)備的半導(dǎo)體器件。這些器件分為非易失性或易失性兩種，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、閃存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。這些器件的存儲容量為 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、單線、SPI、UFS、Xccela 總線和 1-線。