描述 Description

The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 μA.

特性 Features

? Single 2.7V to 3.6V Supply

? Hardware and Software Data Protection

? Low Power Dissipation

– 15 mA Active Current

– 20 μA CMOS Standby Current

? Fast Read Access Time - 200 ns

? Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

? Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum

– 1 to 64 Byte Page Write Operation

? DATA Polling for End of Write Detection

? High-reliability CMOS Technology

– Endurance: 100,000 Cycles

– Data Retention: 10 Years

? JEDEC Approved Byte-wide Pinout

? Commercial and Industrial Temperature Ranges