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AT-31011-TR1分立半導(dǎo)體產(chǎn)品的晶體管-雙極(BJT)-射頻規(guī)格書PDF中文資料

AT-31011-TR1
廠商型號(hào)

AT-31011-TR1

參數(shù)屬性

AT-31011-TR1 封裝/外殼為TO-253-4,TO-253AA;包裝為散裝;類別為分立半導(dǎo)體產(chǎn)品的晶體管-雙極(BJT)-射頻;產(chǎn)品描述:RF TRANS NPN 5.5V SOT143

功能描述

Low Current, High Performance NPN Silicon Bipolar Transistor

封裝外殼

TO-253-4,TO-253AA

文件大小

137.49 Kbytes

頁面數(shù)量

10

生產(chǎn)廠商

HP

中文名稱

安捷倫科技

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-7 23:00:00

人工找貨

AT-31011-TR1價(jià)格和庫存,歡迎聯(lián)系客服免費(fèi)人工找貨

AT-31011-TR1規(guī)格書詳情

描述 Description

Hewlett-Packard’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT-31033 uses the 3 lead SOT-23, while the AT-31011 places the same die in the higher performance 4 lead SOT-143. Both packages are industry standards compatible with high volume surface mount assembly techniques.

The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 10 emitter finger interdigitated geometry yields an extremely fast transistor with low operating currents and reasonable impedances.

Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.9 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Applications include cellular and PCS handsets as well as Industrial-Scientific-Medical systems. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 11 dB or more associated gain at a 2.7 V, 1 mA bias. Moderate output power capability (+9 dBm P1dB) coupled with an excellent noise figure yields high dynamic range for a microcurrent device. High gain capability at 1 V, 1 mA makes these devices a good fit for 900 MHz pager applications.

The AT-3 series bipolar transistors are fabricated using an optimized version of Hewlett-Packard’s 10 GHz fT, 30 GHz fmax Self- Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self- alignment techniques, and gold metalization in the fabrication of these devices.

特性 Features

? High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation

? 900 MHz Performance:

AT-31011: 0.9 dB NF, 13 dB GA

AT-31033: 0.9 dB NF, 11 dB GA

? Characterized for End-Of Life Battery Use (2.7 V)

? SOT-143 SMT Plastic Package

? Tape-And-Reel Packaging Option Available[1]

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    AT-31011-TR1G

  • 制造商:

    Broadcom Limited

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極(BJT)- 射頻

  • 包裝:

    散裝

  • 晶體管類型:

    NPN

  • 電壓 - 集射極擊穿(最大值):

    5.5V

  • 噪聲系數(shù)(dB,不同 f 時(shí)的典型值):

    0.9dB ~ 1.2dB @ 900MHz

  • 增益:

    11dB ~ 13dB

  • 功率 - 最大值:

    150mW

  • 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):

    70 @ 1mA,2.7V

  • 電流 - 集電極 (Ic)(最大值):

    16mA

  • 工作溫度:

    150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    TO-253-4,TO-253AA

  • 供應(yīng)商器件封裝:

    SOT-143

  • 描述:

    RF TRANS NPN 5.5V SOT143

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
AVAGO/安華高
24+
NA/
2065
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價(jià)
AVAGO
25+
SOT143
2065
原裝正品,歡迎來電咨詢!
詢價(jià)
AVAGO
20+
SOT23
49000
原裝優(yōu)勢主營型號(hào)-可開原型號(hào)增稅票
詢價(jià)
AVAGO/安華高
2223+
SOT-143
26800
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)
詢價(jià)
AVAGO/安華高
21+
SOT143
120000
長期代理優(yōu)勢供應(yīng)
詢價(jià)
Broadcom Limited
24+
TO-253-4,TO-253AA
6000
只做原裝,歡迎詢價(jià),量大價(jià)優(yōu)
詢價(jià)
AVAGO
24+
N/A
90000
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、價(jià)格合理
詢價(jià)
AT
24+
SOT23-4
15000
詢價(jià)
AVAGO/安華高
2023+
SOT-143
6895
原廠全新正品旗艦店優(yōu)勢現(xiàn)貨
詢價(jià)
AGILENT
22+
原廠原封
8200
全新原裝現(xiàn)貨!自家?guī)齑?
詢價(jià)