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B2100A

2.0AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER

Features ?SchottkyBarrierChip ?GuardRingDieConstructionforTransientProtection ?LowPowerLoss,HighEfficiency ?SurgeOverloadRatingto50APeak ?ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtectionApplication ?HighTemperatureSoldering:

B2100A

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 Forsurfacemountedapplications Metalsiliconjunction,majoritycarrierconduction Lowpowerloss,highefficiency Built-instrainrelief,idealforautomatedplacement Highforwardsurgecurrentc

B2100AE

2.0AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER

B2100AF

2.0ASCHOTTKYBARRIERRECTIFIER

Features Reducedlowforwardvoltagedrop(VF);Betterefficiencyand cooleroperation. Reducedhigh-temperaturereverseleakage;Increasedreliability againstthermalrunawayfailureinhightemperatureoperation. Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Gr

B2100B

2A100VSchottkydiode

B2100BE

2.0AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER

B2100M

SurfaceMountSchottkyBarrierDiodes

Features: *PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0UtilizingFlame RetardantEpoxyMoldingCompound. *Forsurfacemountedapplications. *ExceedsenvironmentalstandardsofML-S-19500/228 *Lowleakagecurrent

B2100Q

2.0AHIGHVOLTAGESCHOTTKYBARRIERRECTIFIER

B2100SAF

2.0ASCHOTTKYBARRIERRECTIFIER

DescriptionandApplications TheB2100SAFisa2A100VsinglerectifierpackagedinthelowprofileSMAFpackage.ProvidinglowVFandexcellentreverseleakagestabilityathightemperatures,thisdeviceisidealforuseingeneralrectificationapplicationssuchas: ?BoostDiode ?BlockingD

B2100WG-SL

2ASurfaceMountSchottkyBarrierRectifiers

Features ?Lowprofilesurfacemountedapplicationinordertooptimizeboardspace. ?Lowpowerloss,highefficiency. ?Highcurrentcapability,lowforwardvoltagedrop. ?Ultrahigh-speedswitching. ?Siliconepitaxialplanarchip,metalsiliconjunction. ?LeadfreeincompliancewithE