Functional description

The AS7C1025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

特性 Features

? Industrial and commercial temperatures

? Organization: 131,072 x 8 bits

? High speed

- 10/12/15/20 ns address access time

- 5/6/7/8 ns output enable access time

? Low power consumption: ACTIVE

- 605mW / max @ 10 ns

? Low power consumption: STANDBY

- 55 mW / max CMOS

? 6 T 0.18 u CMOS technology

? Easy memory expansion with CE, OE inputs

? Center power and ground

? TTL/LVTTL-compatible, three-state I/O

? JEDEC-standard packages

- 32-pin, 300 mil SOJ

- 32-pin, 400 mil SOJ

? ESD protection ≥ 2000 volts

? Latch-up current ≥ 200 mA