描述 Description

Using low power CMOS process, the AS1810 is designedfor low power, high performance unipolar detection hall-effect application,such as cover switch, contactless switch, solid state switch and lid closesensor etc battery operation. The hall IC integrated an on-chip hall voltagegenerator for magnetic sensing, a comparator that amplifiers the hall voltage, aChopper amplifier, a Schmitt trigger to provide switching hysteresis for noiserejection, and a complementary output.
The total power consumption of AS1810 is typically lessthan 2uA at 1.8V power supply. AS1810 is designed to respond to alternatingSouth pole. White the magnetic flux density (B) is larger than operate point (BOP),the output will be turned on (low), the output is held until the magnetic fluxdensity (B) is lower than release point (BRP), then turn off (high).
The device is available in DFN1216-4L Package and is rated over the -40°Cto 85°C. The all packages are RoHS and Green compliant. ?

特性 Features

? InputVoltage Range : 1.65V to 3.65V
? Micro-powerconsumption ideal for battery power applications
? UniplarOperation, easy to use as output
? Veryhigh sensitivity hall sensor
? LowPower CMOS process technology
? Chopperstabilization amplifier stage
? MagneticSensitivity (typical)
BOP=30Gauss,BRP=20Gauss
? GoodRF noise immunity
? Noneed pull-up resistor
? SmallSolution Size
? RoHS andGreen Compliant

應用 Application

? Coverswitch in clam-shell cellular phones
? Coverswitch in Notebook, PC/PAD
? Contact-lessswitch in consumer products
? Solid StateSwitch
? HandheldWireless Handset Awake Switch
? Lid closesensor for battery-powered devise
? Magnetproximity sensor for reed switch replacement in low duty cycle applications
? DV,DSC, and White Goods