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APT4012BVR

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitchi

ADPOW

Advanced Power Technology

APT4012BVR

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=37A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT4012SVFR

POWERMOSVFREDFET

POWERMOSV?FREDFET PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.

ADPOW

Advanced Power Technology

AT4012

StandardSizePushbuttons

GeneralSpecifications ElectricalCapacity(ResistiveLoad) PowerLevel(silver):3A@125VACor3A@250VACor3A@30VDC LogicLevel(gold):0.4VAmaximum@28VAC/DCmaximum (ApplicableRange0.1mA~0.1A@20mV~28V) Note:FindadditionalexplanationofoperatingrangeinSupplements

NKKNihon Kaiheiki Industry Co. Ltd.

恩楷楷恩楷楷(上海)開關(guān)有限公司

BCL-4012

CompressionStyleRingTongueTerminalfor4/0AWGWire,StudSize1/2,Un-Plated,BarrelLength19.05mm(.750)

MOLEX4Molex Electronics Ltd.

莫仕

BCL-4012-PL

CompressionStyleRingTongueTerminalfor4/0AWGWire,StudSize1/2,Plated,BarrelLength19.05mm(.750)

MOLEX4Molex Electronics Ltd.

莫仕

BX4012

RFAMPLIFIERMODEL

APITECH

API Technologies Corp

C4012ERW

Compact,2:1Input40W,SingleOutputDC/DCConverters

MPD

MPD (Memory Protection Devices)

C4012ERW

C4000ERWSERIES

MPD

MPD (Memory Protection Devices)

C4012RU

C4000RUSERIES

MPD

MPD (Memory Protection Devices)

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TO-247
7300
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