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APM2306AC-TRL

N-ChannelEnhancementModeMOSFET

Features ?30V/3.5A, RDS(ON)=70m?(typ.)@VGS=5V RDS(ON)=42m?(typ.)@VGS=10V ?SuperHighDenseCellDesign ?HighPowerandCurrentHandlingCapability ?SOT-23Package Applications ?SwitchingRegulators ?SwitchingConverters

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM2306AC-TU

N-ChannelEnhancementModeMOSFET

Features ?30V/3.5A, RDS(ON)=70m?(typ.)@VGS=5V RDS(ON)=42m?(typ.)@VGS=10V ?SuperHighDenseCellDesign ?HighPowerandCurrentHandlingCapability ?SOT-23Package Applications ?SwitchingRegulators ?SwitchingConverters

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM2306AC-TUL

N-ChannelEnhancementModeMOSFET

Features ?30V/3.5A, RDS(ON)=70m?(typ.)@VGS=5V RDS(ON)=42m?(typ.)@VGS=10V ?SuperHighDenseCellDesign ?HighPowerandCurrentHandlingCapability ?SOT-23Package Applications ?SwitchingRegulators ?SwitchingConverters

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

AT-2306

StriplineMountingFixedAttenuators

HIROSEHirose Electric Company

廣瀨日本廣瀨電機(jī)株式會(huì)社

BC2306

Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

BC2306-CAR

N-Channel30-V(D-S)MOSFET

FEATURES ●PowerMOSFET ●100RgTested ●-CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcapable.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

C2306

MMDS/ISM/S-BandMixer

[PacificWireless] Description TheC2306isaflexible,highintercept,frequencyconversionGaAsMMICpackagedina14pinSOICpackage.TheMMICisusableasanupconverterordownconvertermixer.EachsubcircuitisbroughtoutonseparatepinstoallowforcustomfilteringontheIF/RF

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

C2306TR

MMDS/ISM/S-BandMixer

[PacificWireless] Description TheC2306isaflexible,highintercept,frequencyconversionGaAsMMICpackagedina14pinSOICpackage.TheMMICisusableasanupconverterordownconvertermixer.EachsubcircuitisbroughtoutonseparatepinstoallowforcustomfilteringontheIF/RF

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

CEN2306A

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,4.1A,RDS(ON)=45mW@VGS=4.5V. RDS(ON)=55mW@VGS=2.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant. RDS(ON)=110mW@VGS=1.8V.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

CES2306

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,3.6A,RDS(ON)=60mΩ@VGS=4.5V. RDS(ON)=70mΩ@VGS=2.5V. RDS(ON)=100mΩ@VGS=1.8V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■Leadfreeproductisacquired. ■SOT-23package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

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