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APM9926COC-TR

N-ChannelEnhancementModeMOSFET

N-ChannelEnhancementModeMOSFET Features ?20V/6A,RDS(ON)=28m?(typ.)@VGS=4.5V RDS(ON)=38m?(typ.)@VGS=2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SO-8andTSSOP-8Packages Applications ?PowerManageme

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM9926KC-TR

N-ChannelEnhancementModeMOSFET

N-ChannelEnhancementModeMOSFET Features ?20V/6A,RDS(ON)=28m?(typ.)@VGS=4.5V RDS(ON)=38m?(typ.)@VGS=2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SO-8andTSSOP-8Packages Applications ?PowerManageme

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APM9926OC-TR

N-ChannelEnhancementModeMOSFET

N-ChannelEnhancementModeMOSFET Features ?20V/6A,RDS(ON)=28m?(typ.)@VGS=4.5V RDS(ON)=38m?(typ.)@VGS=2.5V ?SuperHighDenseCellDesignforExtremelyLowRDS(ON) ?ReliableandRugged ?SO-8andTSSOP-8Packages Applications ?PowerManageme

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

BLM9926

N-ChannelEnhancementModePowerMOSFET

BellingSHANGHAI BELLING CO., LTD.

上海貝嶺上海貝嶺股份有限公司

CED9926

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●20V,26A,RDS(ON)=30m?@VGS=4.5V. RDS(ON)=40m@V?GS=2.5V. ●SuperhighdensecelldesignforextremelylowRDS(ON). ●Highpowerandcurrenthandlingcapability. ●TO-251&TO-252package.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEG9926

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■20V,4.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=40mΩ@VGS=2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TSSOP-8forSurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9926

DualN-ChannelEnhancementModeFieldEffectTransistor

Feature ●20V/,6A,RDS(ON)=30mΩ(MAX)@VGS=4.5V.RDS(ON)=40mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage.

CETChino-Excel Technology

華瑞華瑞股份有限公司

CEM9926

DualN-Channel20-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

CEM9926

DualN-ChannelEnhancementModeMOSFET

Feature ●20V/6A,RDS(ON)=33mΩ(MAX)@VGS=4.5V.RDS(ON)=50mΩ(MAX)@VGS=2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON). ●ReliableandRugged. ●SOP-8forSurfaceMountPackage. Applications ●LI-IONProtectionCircuit

ZPSEMIZP Semiconductor

至尚臻品

CEM9926

DualN-ChannelEnhancementModeFieldEffectTransistor

FEATURES 20V,7A,RDS(ON)=25mW@VGS=4.5V. RDS(ON)=34mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

華瑞華瑞功率電子股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    AP9926EM-A

  • 制造商：

    A-POWER

  • 制造商全稱(chēng)：

    Advanced Power Electronics Corp.

  • 功能描述：

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SR
23+
SOP8
5000
原裝正品,假一罰十
 詢(xún)價(jià)
A-POWER
23+
原廠原包
19960
只做進(jìn)口原裝 終端工廠免費(fèi)送樣
 詢(xún)價(jià)
VBSEMI/臺(tái)灣微碧
23+
SOP-8
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢(xún)價(jià)
VB
23+
SOP-8
28000
原裝正品
 詢(xún)價(jià)
APEC
22+
SOP-8
25000
只有原裝絕對(duì)原裝,支持BOM配單!
 詢(xún)價(jià)
VB
23+
SOP-8
12800
公司只有原裝 歡迎來(lái)電咨詢(xún)。
 詢(xún)價(jià)
APEC
22+
SOP-8
25000
只有原裝原裝,支持BOM配單
 詢(xún)價(jià)
VB
25+
SOP-8
15868
原裝正品,歡迎來(lái)電咨詢(xún)!
 詢(xún)價(jià)
VB
24+
SOP-8
24903
公司現(xiàn)貨庫(kù)存 支持實(shí)單
 詢(xún)價(jià)
VBSEMI/臺(tái)灣微碧
24+
SOP-8
60000
全新原裝現(xiàn)貨
 詢(xún)價(jià)
更多AP9926EM-A供應(yīng)商 更新時(shí)間2025-7-28 15:52:00

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