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FDS6680A

30VN-ChannelMOSFET

Features ?Ultra-lowgatecharge ?Highperformancetrenchtechnologyforextremely lowRDS(ON) ?Highpowerandcurrenthandlingcapability (VGS=10V) VDS(V)=30V ID=12A RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

FDS6680A-NL

N-ChannelEnhancementModePowerMOSFET

Features ?VDS=20V,ID=10A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDS6680AS

30VN-ChannelPowerTrenchSyncFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS6680AS

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDS6680ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6680ASincludesanintegratedSchottkydio

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS6680AS_NL

30VN-ChannelPowerTrenchSyncFET

GeneralDescription TheFDS6680ASisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6680ASincludesanintegratedSchottkydio

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDS6680S

30VN-ChannelPowerTrenchSyncFET?

GeneralDescription TheFDS6680SisdesignedtoreplaceasingleSO-8MOSFETandSchottkydiodeinsynchronousDC:DCpowersupplies.This30VMOSFETisdesignedtomaximizepowerconversionefficiency,providingalowRDS(ON)andlowgatecharge.TheFDS6680SincludesanintegratedSchottkydiode

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDU6680

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheonstateresistanceandyetmaintainlowgatechargeforsuperiorswitchingperformance. Features ?46A,30VRDS(ON)=10mΩ@V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDU6680

30VN-ChannelPowerTrenchMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

FDU6680A

30VN-ChannelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowRDS(ON),fastswitchingspeedandextremelylowRDS

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

GSC6680

N-CHANNELENHANCEMENTMODEPOWERMOSFET

GTMGTM CORPORATION

勤益投資控股勤益投資控股股份有限公司

技術(shù)參數(shù)

  • Configuration：

    Single

  • Type：

    N

  • VDS (V)：

    30

  • VGS (±V)：

    20

  • IDS (A) Ta=25°C：

    18.5

  • RDS(ON) (mΩ max)/10V：

    9

  • RDS(ON) (mΩ max)/4.5V：

    15

  • Ciss (pF)：

    1020/1630

  • Qg (nC)：

    13/20.8

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APEC
16+
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42000
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6000
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5589
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更多AP6680BGMT供應(yīng)商 更新時(shí)間2025-7-28 16:00:00

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