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HS3103

HighPerformanceRelativeHumidityandTemperatureSensor

Features Humidityrange:0to100RH Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) Hydrophobicmembrane,IP67rating 14-bitresolution:0.01RH,typical Independentprogrammableresolutionsettings:8, 10,12,14bits FastRHresponsetime:1secondtimeconstant, typical(w

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HS3103

HighPerformanceRelativeHumidityandTemperatureSensorwithDigitalOutput

Features ■Humidityrange:0to100RH ■Automotivegrade,AEC-Q100qualified,Grade2, -40°Cto+105°C ■Industrialgrade,JEDECqualified,-40°Cto +125°C ■DigitalI2CoutputwithCRCchecksum ■RHaccuracy:±1.5RH,typical(HS4001) ■14-bitresolution:0.04RH,typical ■Independentpro

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HS3103

HighPerformanceRelativeHumidityandTemperatureSensor

Features ?Humidityrange:0to100RH ?Humidityaccuracy:±1.5RH,typical(HS3101, 10to90RH,25°C) ?Hydrophobicmembrane,IP67rating ?14-bitresolution:0.01RH,typical ?Independentprogrammableresolutionsettings:8, 10,12,14bits ?FastRHresponsetime:1secondtimeconstant,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

HS3103-MCX

HighPerformanceRelativeHumidityandTemperatureSensorModule

Applications ■Climatecontrolsystems ■Homeappliances ■Weatherstations ■Industrialautomation ■Medicalequipment Features ■Humidityrange:0to100RH ■HumiSealcoatingformoistureprotection ■Humidityaccuracy:±1.5RH,typical ■14-bitresolution:0.01RH,typical ■Indep

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IIRL3103

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IIRLR3103

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IR3103

Half-BridgeFredFETandIntegratedDriver

Description TheIR3103isagatedriverICintegratedwithahalfbridgeFredFETdesignedformotordriveapplicationsupto180W(heatsink-less).Thesleekandcompactsingle-in-linepackageisoptimizedforelectronicmotorcontrolinapplianceapplicationssuchasfansandcompressorsforrefr

IRF

International Rectifier

IRF3103

HEXFET?PowerMOSFET

InterFET

InterFET Corporation

IRL3103

PowerMOSFET(Vdds=30V,Rds(on)=12mohm,Id=64A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRL3103

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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更多AP3103A供應(yīng)商 更新時(shí)間2025-7-27 9:01:00

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