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HM2309C

PChannelEnhancementModeMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM2309D

P-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM2309DR

P-Channel60V(D-S)

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

HM2309PR

P-ChannelEnhancementModePowerMOSFET

HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd

華之美半導(dǎo)體深圳市華之美半導(dǎo)體有限公司

ICS2309

3.3VOLTZERODELAY,LOWSKEWBUFFER

ICST

Integrated Circuit Systems

IDT2309

3.3VZERODELAYCLOCKBUFFER

DESCRIPTION: TheIDT2309isahigh-speedphase-lockloop(PLL)clockbuffer,designedtoaddresshigh-speedclockdistributionapplications.Thezerodelayisachievedbyaligningthephasebetweentheincomingclockandtheoutputclock,operablewithintherangeof10to133MHz. TheIDT2309is

IDT

Integrated Device Technology, Inc.

IDT2309

3.3VZERODELAYCLOCKBUFFERPhase-LockLoopClockDistribution

IDT

Integrated Device Technology, Inc.

IDT2309A

3.3VZERODELAYCLOCKBUFFER

DESCRIPTION: TheIDT2309Aisahigh-speedphase-lockloop(PLL)clockbuffer,designedtoaddresshigh-speedclockdistributionapplications.Thezerodelayisachievedbyaligningthephasebetweentheincomingclockandtheoutputclock,operablewithintherangeof10to133MHz. TheIDT2309A

IDT

Integrated Device Technology, Inc.

IDT2309A

3.3VZERODELAYCLOCKBUFFER

FEATURES: ?Phase-LockLoopClockDistribution ?10MHzto133MHzoperatingfrequency ?Distributesoneclockinputtoonebankoffiveandonebankof fouroutputs ?Separateoutputenableforeachoutputbank ?OutputSkew

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

IDT2309B

3.3VZERODELAYCLOCKBUFFER

DESCRIPTION: TheIDT2309Bisahigh-speedphase-lockloop(PLL)clockbuffer,designedtoaddresshigh-speedclockdistributionapplications.Thezerodelayisachievedbyaligningthephasebetweentheincomingclockandtheoutputclock,operablewithintherangeof10to133MHz. FEATURES: ?

IDT

Integrated Device Technology, Inc.

技術(shù)參數(shù)

  • Configuration：

    Single (with ESD Diode)

  • Type：

    P

  • VDS (V)：

    -30

  • VGS (±V)：

    20

  • IDS (A) Ta=25°C：

    -4

  • RDS(ON) (mΩ max)/10V：

    52

  • RDS(ON) (mΩ max)/4.5V：

    80

  • Ciss (pF)：

    830/1330

  • Qg (nC)：

    7/11.2

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