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AP2213D-3.3G1

Marking:AP2213D-3.3G1;Package:TO-252-2;500mA LOW NOISE LDO REGULATOR

Features ?Upto500mAOutputCurrent ?LowStandbyCurrent ?LowDropoutVoltage:VDROP=350mVat500mA ?HighOutputAccuracy:±1 ?GoodRippleRejectionAbility:75dBat100HzandIOUT=100μA ?TightLoadandLineRegulation ?LowTemperatureCoefficient ?OverCurrentProtection ?T

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

AP2213D-3.3TRE1

Marking:AP2213D-3.3E1;Package:TO-252-2;500mA LOW NOISE LDO REGULATOR

Features ?Upto500mAOutputCurrent ?LowStandbyCurrent ?LowDropoutVoltage:VDROP=350mVat500mA ?HighOutputAccuracy:±1 ?GoodRippleRejectionAbility:75dBat100HzandIOUT=100μA ?TightLoadandLineRegulation ?LowTemperatureCoefficient ?OverCurrentProtection ?T

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

AP2213D-3.3TRG1

Marking:AP2213D-3.3G1;Package:TO-252-2;500mA LOW NOISE LDO REGULATOR

Features ?Upto500mAOutputCurrent ?LowStandbyCurrent ?LowDropoutVoltage:VDROP=350mVat500mA ?HighOutputAccuracy:±1 ?GoodRippleRejectionAbility:75dBat100HzandIOUT=100μA ?TightLoadandLineRegulation ?LowTemperatureCoefficient ?OverCurrentProtection ?T

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

AP240N03NF

Marking:AP240N03NF;Package:PDFN5x6-8L;30V N-Channel Enhancement Mode MOSFET

Description TheAP240N03NFusesadvancedAPM-SGTVtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasaBatteryprotection orinotherSwitchingapplication. GeneralFeatures VDS=30VID=240A RDS

APMEA POWER MICROELECTRONICS

永源微電子深圳市永源微電子科技有限公司

AP3041MTR-G1

Marking:AP3041M-G1;Package:SOIC-16;BOOST CONTROLLER FOR WLED DRIVER IN MEDIUM-SIZED LCD PANEL

Features -InputVoltageRange:5Vto27V -1APeakand10VMOSFETGateDriver -20nsQuickMOSFETGateDriver -DutyCycleLimitof90 -ProgrammableUVLO -PWMDimmingControl -ProgrammableOverVoltageProtection -LEDOpenProtection -LEDShortCircuitProtection -DiodeShortCirc

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

AP3303S9-13

Marking:AP3303;Package:SSOP-9;QUASI-RESONANT PWM CONTROLLER

Features Quasi-ResonantOperationunderallLineandLoadCondition Non-Audible-NoiseQuasi-ResonantControl High-VoltageStartup EmbeddedVCCLDOtoGuaranteeWideRangeVCC_INVoltage LowVCCChargeCurrentReducesStandbyPowerinOutputShortSituation AdaptiveBurstModeOperationwith

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

AP3306S10-13

Marking:AP3306;Package:SO-10;HIGHLY INTEGRATED ACTIVE CLAMP FLYBACK PWM CONTROLLER

Features -ActiveClampFlybackTopologywithRecycledLeakageEnergy andPseudoZeroVoltageSwitchingFunctions -High-VoltageStartup -EmbeddedVCCLDOforVCCLPintoGuaranteeWideRange OutputVoltage -Non-Audible-NoiseQuasi-ResonantControl -SoftStartDuringStartupProcess -F

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

AP39303S16-13

Marking:AP39303;Package:HSOP-16;QUASI-RESONANT PWM SWITCHER

Features Quasi-ResonantOperationunderallLineandLoadCondition PeakCurrentModeControl@DCM High-VoltageStartup Built-In700VHighPerformancePowerMOSFET EmbeddedVCCLDOtoGuaranteeWideRangeVCC_INVoltage LowVCCChargeCurrentReducesStandbyPowerinOutput ShortSituation

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

AP3987CTS7-13

Marking:AP3987CT;Package:SO-7;HIGH FREQUENCY PRIMARY SIDE POWER SWITCHER FOR OFF-LINE SMPS

Features -Primary-SideControlforEliminatingOpto-Coupler -10mWNo-LoadInputPower -Built-In650VHighPerformanceMOSFET -FlybackTopologyinDCMOperation -Built-In0.35VCableCompensationforCV -MultiplePWM/PFMControlModetoImproveAudioNoiseand Efficiency -VCSJitter

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

AP43770T16-13

Marking:AP43770;Package:TSSOP-16;HIGH-PERFORMANCE USB PD CONTROLLER

Features CompliantwithUSBPDRev3.0V1.2 USB-IFPD3.0/PPSCertificatedTID=1090017 QualcommQC4andQC4+,QC3.0,QC2.0Built-in SupportVOUT20mV/Stepfrom3.3Vto20V SupportCurrentLimit50mA/Stepupto6A OTP(One-Time-Programmable)forMainFirmware MTP(Multi-Time-Programmable)fo

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào):

    AP

  • 制造商:

    BOPLA

  • 功能描述:

    Bulk

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更多AP供應(yīng)商 更新時(shí)間2025-7-25 16:56:00