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BAV102

Generalpurposediodes

DESCRIPTION TheBAV100toBAV103areswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES ?SmallhermeticallysealedglassSMDpackage ?Switchingspeed:max.50ns ?Generalapplication ?Continuou

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

BAV102

HighVoltage,GeneralPurposeDiode

GeneralDescription: AGeneralPurposediodethatcoupleshighforwardconductancefastswitchingspeedandhighblockingvoltagesinaglassleadlessLL-34SurfaceMountpackage. PlacementoftheExpansionGaphasnorelationshiptothelocationoftheCathodeTerminalwhichisindicatedby

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BAV102

SmallSignalDiodes

FEATURES ?SiliconEpitaxialPlanarDiodes ?Forgeneralpurpose ?Thesediodesarealsoavailableinother casestylesincluding:theDO-35casewith thetypedesignationsBAV19toBAV21,theSOD-123 casewiththetypedesignationsBAV19WtoBAV21W, andtheSOT-23casewiththe

GE

GE Industrial Company

BAV102

UltrafastSwitchingSurfaceMountSi-Rectifiers

SuperfastRecoverySMDRectifierDiodes Features PackagecompatibletoSOD-87 Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Rectificationofhigherfrequencies, Highspeedswitching Commercialgrade1) MechanicalData1)

DiotecDiotec Semiconductor

德歐泰克

BAV102

Ultrafastsiliconrectifierdiodes

ForwardCurrent:0,2A ReverseVoltage:50to300V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 ●Onegreenringdenotescathodeandultrafastswitchingdevice ●Thetypenumbersarenotedonlyonthelableonthereel

SemikronSemikron International

賽米控丹佛斯

BAV102

HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES

VOLTAGE120to250VoltsPOWER300mWatts FEATURES ?FastswitchingSpeed. ?SurfaceMountPackageIdeallySuitedForAutomaticInsertion. ?SiliconEpitaxalPlanarConstruction. ?IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

BAV102

Ultrafastsiliconrectifierdiodes

SemikronSemikron International

賽米控丹佛斯

BAV102

SMALLSIGNALSWITCHINGDIODE

VOLTAGERANGE:50-200V CURRENT:250mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:MINI-MELF,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:Approx0.031grams

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

BAV102

SuperfastSwitchingSurfaceMountSi-Diodes

DiotecDiotec Semiconductor

德歐泰克

BAV102

500mWHermeticallySealedGlassHighVoltageSwitchingDiodes

Features ●?HighVoltageSwitchingDevice ?●MiniMelfpackage ?●Surfacedevicetypemounting ?●Hermeticallysealedglass ?●Compressionbondedconstruction ?●Allexternalsurfacearecorrosionresistantandleadsarereadilysolderable ?●RoHScompliant ?●MatteTin(Sn

TSCTaiwan Semiconductor Company, Ltd

臺(tái)灣半導(dǎo)體臺(tái)灣半導(dǎo)體股份有限公司

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AOS
2016+
TO-262
6528
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AOS
24+
TO262
65300
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AOS/萬代
23+
TO-262
24190
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AOS/萬代
21+
TO-262
30000
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1809+
TO-262
3675
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!
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AOS/萬代
23+
TO262
50000
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AOS
23+
TO-262
50000
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22+
NA
6878
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Alpha & Omega Semiconductor In
22+
TO2623 Long Leads I2Pak TO262A
9000
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AO
23+
TO-262
6000
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