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BAV102

SiliconEpitaxialPlanarDiodes

Features ?SiliconEpitaxialPlanarDiodes ?Lead(Pb)-freecomponent ?ComponentinaccordancetoRoHS2002/95/ECandWEEE2002/96/EC Applications ??Generalpurposes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BAV102

Generalpurposediodes

DESCRIPTION TheBAV100toBAV103areswitchingdiodesfabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSMDpackages. FEATURES ?SmallhermeticallysealedglassSMDpackage ?Switchingspeed:max.50ns ?Generalapplication ?Continuou

PHIPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PHI

BAV102

HighVoltage,GeneralPurposeDiode

GeneralDescription: AGeneralPurposediodethatcoupleshighforwardconductancefastswitchingspeedandhighblockingvoltagesinaglassleadlessLL-34SurfaceMountpackage. PlacementoftheExpansionGaphasnorelationshiptothelocationoftheCathodeTerminalwhichisindicatedby

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BAV102

SmallSignalDiodes

FEATURES ?SiliconEpitaxialPlanarDiodes ?Forgeneralpurpose ?Thesediodesarealsoavailableinother casestylesincluding:theDO-35casewith thetypedesignationsBAV19toBAV21,theSOD-123 casewiththetypedesignationsBAV19WtoBAV21W, andtheSOT-23casewiththe

GE

GE Industrial Company

BAV102

UltrafastSwitchingSurfaceMountSi-Rectifiers

SuperfastRecoverySMDRectifierDiodes Features PackagecompatibletoSOD-87 Highpowerdissipation ComplianttoRoHS,REACH, ConflictMinerals1) TypicalApplications Rectificationofhigherfrequencies, Highspeedswitching Commercialgrade1) MechanicalData1)

DiotecDiotec Semiconductor

德歐泰克

BAV102

Ultrafastsiliconrectifierdiodes

ForwardCurrent:0,2A ReverseVoltage:50to300V Features ●Max.soldertemperature:260°C ●PlasticmaterialhasULclassification94V-0 ●Onegreenringdenotescathodeandultrafastswitchingdevice ●Thetypenumbersarenotedonlyonthelableonthereel

SemikronSemikron International

賽米控丹佛斯

BAV102

HIGHVOLTAGESURFACEMOUNTSWITCHINGDIODES

VOLTAGE120to250VoltsPOWER300mWatts FEATURES ?FastswitchingSpeed. ?SurfaceMountPackageIdeallySuitedForAutomaticInsertion. ?SiliconEpitaxalPlanarConstruction. ?IncompliancewithEURoHS2002/95/ECdirectives

PANJITPan Jit International Inc.

強(qiáng)茂強(qiáng)茂股份有限公司

BAV102

Ultrafastsiliconrectifierdiodes

SemikronSemikron International

賽米控丹佛斯

BAV102

Singlegeneral-purposeswitchingdiodes

Generaldescription Singlegeneral-purposeswitchingdiodes,fabricatedinplanartechnology,andencapsulatedinsmallhermeticallysealedglassSOD80CSurface-MountedDevice(SMD)packages. Features ●Highswitchingspeed:trr≤50ns ●Lowleakagecurrent ●Lowcapacitance:Cd

ETC

ETC

BAV102

SMALLSIGNALSWITCHINGDIODE

VOLTAGERANGE:50-200V CURRENT:250mA FEATURES ◇Siliconepitaxialplanardiode ◇Highspeedswitchingdiode ◇500mWpowerdissipation MECHANICALDATA ◇Case:MINI-MELF,glasscase ◇Polarity:Colorbanddenotescathode ◇Weight:Approx0.031grams

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀(jì)微電子股份有限公司

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更多AOW102-G供應(yīng)商 更新時(shí)間2025-7-29 17:44:00

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