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AO9926E

Dual N-Channel Enhancement Mode Field Effect Transistor; ? VDS (V) = 20V\n? ID = 8A (VGS = 4.5V)\n? RDS(ON);

General Description\nThe AO9926E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO9926E is Pb-free (meets ROHS & Sony 259 specifications). AO9926EL is a Green Product ordering option.

AO9926E

Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO9926EusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ItisESDprotected.StandardProductAO9926EisPb-free(meetsR

AO9926EL

Dual N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO9926EusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ItisESDprotected.StandardProductAO9926EisPb-free(meetsR

AP9926

DualN-ChannelEnhancementModeMOSFET

AP9926EM-A

N-CHANNELENHANCEMENTMODEPOWERMOSFET

AP9926EO

PowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching

AP9926GEM

N-CHANNELENHANCEMENTMODEPOWERMOSFET

AP9926GEO

Capableof2.5VGateDrive,SurfaceMountPackage

AP9926GEO-HF

Capableof2.5VGateDrive,SurfaceMountPackage

AP9926GM

LowGateCharge,Surfacemountpackage