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AO4600

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4600usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO4600isPb-free(meetsROHS&Sony259specifications).AO

AO4600

絲?。?a target="_blank" title="Marking" href="/4600/marking.html">4600；Package：SOP-8；Complementary Trench MOSFET

■Features ●N-Channel: VDS(V)=30V ID=6.9A(VGS=10V) RDS(ON)

AO4600

MOSFET：Complementary;

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

AO4600-HF

絲?。?a target="_blank" title="Marking" href="/4600/marking.html">4600；Package：SOP-8；Complementary Trench MOSFET

■Features ●N-Channel: VDS(V)=30V ID=6.9A(VGS=10V) RDS(ON)

AO4600L

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4600usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsformahigh-speedpowerinverter,suitableforamultitudeofapplications.StandardProductAO4600isPb-free(meetsROHS&Sony259specifications).AO

AO4600CL

包裝：卷帶（TR） 類別：分立半導體產(chǎn)品 晶體管 - FET，MOSFET - 陣列 描述：MOSFET N/P-CH 30V 8SOIC

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