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AO3434

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO3434usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ItisESDprotected.StandardProductAO3434isPb-free(meetsROHS&Sony259specifications). Features

AO3434

N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=4.2A(VGS=10V) ●RDS(ON)

AO3434

MOSFET：N-Channel;

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

AO3434

30V N-Channel MOSFET

AO3434A

30V N-Channel MOSFET

GeneralDescription TheAO3434AcombinesadvancedtrenchMOSFETtechnologywithalowresistancepackagetoprovideextremelylowRDS(ON).Thisdeviceisidealforloadswitchandbatteryprotectionapplications. ProductSummary VDS30V ID(atVGS=10

AO3434A

N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=4A(VGS=10V) ●RDS(ON)

AO3434A

低壓MOSFET (12V - 30V);

30V N-Channel MOSFET\n

AO3434A-HF

N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=4A(VGS=10V) ●RDS(ON)

AO3434-HF

N-Channel MOSFET

■Features ●VDS(V)=30V ●ID=4.2A(VGS=10V) ●RDS(ON)

AO3434_10

30V N-Channel MOSFET