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首頁(yè)>AM29F400AT-90FIB>規(guī)格書(shū)詳情

AM29F400AT-90FIB中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

AM29F400AT-90FIB
廠商型號(hào)

AM29F400AT-90FIB

功能描述

4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

文件大小

136.62 Kbytes

頁(yè)面數(shù)量

35 頁(yè)

生產(chǎn)廠商 Advanced Micro Devices
企業(yè)簡(jiǎn)稱

AMD超威半導(dǎo)體

中文名稱

美國(guó)超威半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識(shí)
AMD
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-2 11:13:00

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AM29F400AT-90FIB規(guī)格書(shū)詳情

GENERAL DESCRIPTION

The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each. The 4 Mbits of data is divided into 11 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F400A is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCCsupply. 12.0 Volt VPPis not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

■5.0 V ±10 for read and write operations

— Minimizes system level power requirements

■Compatible with JEDEC-standards

— Pinout and software compatible with single-power-supply flash

— Superior inadvertent write protection

■Package options

— 44-pin SO

— 48-pin TSOP

■Minimum 100,000 write/erase cycles guaranteed

■High performance

— 60 ns maximum access time

■Sector erase architecture

— One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and seven 64 Kbytes

— Any combination of sectors can be erased. Also supports full chip erase.

■Sector protection

— Hardware method that disables any combination of sectors from write or erase operations. Implemented using standard PROM programming equipment.

■Embedded Erase?Algorithms

— Automatically preprograms and erases the chip or any sector

■Embedded Program?Algorithms

— Automatically programs and verifies data at specified address

■DataPolling and Toggle Bit feature for detection of program or erase cycle completion

■Ready/Busyoutput (RY/BY)

— Hardware method for detection of program or erase cycle completion

■Erase Suspend/Resume

— Supports reading data from a sector not being erased

■Low power consumption

— 20 mA typical active read current for Byte Mode

— 28 mA typical active read current for Word Mode

— 30 mA typical program/erase current

■Enhanced power management for standby mode

—1 μA typical standby current

■Boot Code Sector Architecture

— T = Top sector

— B = Bottom sector

■Hardware RESET pin

— Resets internal state machine to the read mode

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