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首頁(yè)>AM28F512A-90PEB>規(guī)格書(shū)詳情

AM28F512A-90PEB中文資料超威半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

AM28F512A-90PEB
廠商型號(hào)

AM28F512A-90PEB

功能描述

512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

文件大小

463.73 Kbytes

頁(yè)面數(shù)量

34 頁(yè)

生產(chǎn)廠商

AMD

中文名稱

超威半導(dǎo)體

網(wǎng)址

網(wǎng)址

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-8-6 18:41:00

人工找貨

AM28F512A-90PEB價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

AM28F512A-90PEB規(guī)格書(shū)詳情

GENERAL DESCRIPTION

The Am28F512A is a 512 Kbit Flash memory organized as 64 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F512A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F512A is erased when shipped from the factory.

DISTINCTIVE CHARACTERISTICS

■ High performance

— 70 ns maximum access time

■ CMOS low power consumption

— 30 mA maximum active current

— 100 μA maximum standby current

— No data retention power consumption

■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

■ 100,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ?5

■ Latch-up protected to 100 mA from -1 V to VCC +1 V

■ Embedded Erase Electrical Bulk Chip-Erase

— Two seconds typical chip-erase including pre-programming

■ Embedded Program

— 4 μs typical byte-program including time-out

— One second typical chip program

■ Command register architecture for

microprocessor/microcontroller compatible write interface

■ On-chip address and data latches

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ Embedded algorithms for completely self-timed write/erase operations

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
AMD
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2016+
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14
原裝現(xiàn)貨假一賠十
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23+
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獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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