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首頁>AM28F256-120PC>規(guī)格書詳情

AM28F256-120PC中文資料超威半導體數(shù)據(jù)手冊PDF規(guī)格書

AM28F256-120PC
廠商型號

AM28F256-120PC

功能描述

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

文件大小

493.47 Kbytes

頁面數(shù)量

35

生產廠商 Advanced Micro Devices
企業(yè)簡稱

AMD超威半導體

中文名稱

美國超威半導體公司官網

原廠標識
AMD
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-8-4 18:35:00

人工找貨

AM28F256-120PC價格和庫存,歡迎聯(lián)系客服免費人工找貨

AM28F256-120PC規(guī)格書詳情

GENERAL DESCRIPTION

The Am28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The Am28F256 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F256 is erased when shipped from the factory.

DISTINCTIVE CHARACTERISTICS

■ High performance

— 70 ns maximum access time

■ CMOS Low power consumption

— 30 mA maximum active current

— 100 μA maximum standby current

— No data retention power consumption

■ Compatible with JEDEC-standard byte-wid 32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

■ 10,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V ±5

■ Latch-up protected to 100 mA

from –1 V to VCC +1 V

■ Flasherase Electrical Bulk Chip-Erase

— One second typical chip-erase

■ Flashrite Programming

— 10 μs typical byte-program

— 0.5 second typical chip program

■ Command register architecture for microprocessor/microcontroller compatible write interface

■ On-chip address and data latches

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ Automatic write/erase pulse stop timer

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